Taichung, Taiwan

Yuan-Shing Jing

This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2001.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Innovations by Yuan-Shing Jing

Introduction

Yuan-Shing Jing is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to wafer storage.

Latest Patents

Yuan-Shing Jing holds a patent titled "Dry Air/N2 post treatment to avoid the formation of B/P precipitation after BPSG film deposition." This method involves storing wafers immediately after the deposition of a layer of BPSG in an environment of dry air, dry nitrogen, dry argon, or a nitrogen-oxygen plasma chamber. The storage can occur over a variable period and with a variable delay between BPSG deposition and BPSG flow, depending on the storage environment applied. This technique prevents the surface of the deposited BPSG layer from being exposed to moisture, thereby avoiding the formation of unstable irregularities.

Career Highlights

Yuan-Shing Jing is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work has been instrumental in enhancing the quality and reliability of semiconductor devices.

Collaborations

Yuan-Shing Jing has collaborated with notable colleagues such as Han-Chung Chen and Chiarn-Lung Lee, contributing to advancements in semiconductor technology.

Conclusion

Yuan-Shing Jing's innovative approach to wafer storage has the potential to significantly improve semiconductor manufacturing processes. His contributions reflect the importance of innovation in technology development.

Profile summary based on public USPTO records.
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