Yuan-Cheng Yang

Title: Innovations of Yuan-Cheng Yang

Introduction

Yuan-Cheng Yang is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high voltage transistors. With a total of 4 patents to his name, Yang continues to push the boundaries of innovation in his industry.

Latest Patents

One of his latest patents is titled "Method of forming high voltage transistor and structure resulting therefrom." This method involves etching a trench on a substrate's surface, filling it with a dielectric material to create a first isolation region, and implanting oxygen into the substrate to form an implant region. The process culminates in the formation of a transistor that includes a channel laterally surrounding the second isolation region. Another notable patent is "Gate electrode extending into a shallow trench isolation structure in high voltage devices." This patent describes an integrated chip that features a source region and a drain region, with a shallow trench isolation structure arranged within the substrate. The design allows for a portion of the gate electrode to extend into the STI structure, optimizing the performance of high voltage devices.

Career Highlights

Yuan-Cheng Yang is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work focuses on advancing technologies that enhance the efficiency and reliability of semiconductor devices.

Collaborations

Yang has collaborated with notable colleagues, including Yun-Chi Wu and Shih-Jung Tu, contributing to various innovative projects within the company.

Conclusion

Yuan-Cheng Yang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of high voltage transistors, showcasing the importance of innovation in advancing technology.