The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 13, 2023

Filed:

May. 28, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Chia-Chen Chang, Kaohsiung, TW;

Yuan-Cheng Yang, Hsinchu, TW;

Yun-Chi Wu, Tainan, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/76205 (2013.01); H01L 21/76877 (2013.01);
Abstract

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate and a first isolation structure which has a first corner. The semiconductor device also includes a first well region with a first conductive type. The semiconductor device includes further includes a gate structure over the first well region and covers a portion of the first corner of the first isolation structure. In addition, the semiconductor device includes a first doped region and a second doped region disposed on two opposites of the gate structure. Each of the first doped region and the second doped region has the first conductive type. The semiconductor device also includes a first counter-doped region in the first well region with a second conductive type different from the first conductive type. The first counter-doped region covers the first corner of the first isolation structure.


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