This inventor holds 1 USPTO granted patent. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Yu-wen Tseng: Innovator in LDMOS Transistor Technology
Introduction
Yu-wen Tseng is a talented inventor based in Chiayi City, Taiwan. She has made significant contributions to the field of semiconductor technology, particularly in the development of LDMOS transistor devices. Her innovative approach focuses on enhancing the performance and efficiency of these devices.
Latest Patent Applications
Yu-wen Tseng's notable patent application is titled "LDMOS Transistor Device and Method for Forming the Same." This application describes an LDMOS transistor device that features a stepped isolation structure over a substrate. The device includes a gate electrode positioned over a portion of the stepped isolation structure, a source region in the substrate, and a drain region also in the substrate. The stepped isolation structure consists of a first portion with a specific thickness and a second portion that has a greater thickness, which includes dopants. The drain region is strategically placed adjacent to the stepped isolation structure.
Conclusion
Yu-wen Tseng's work in LDMOS transistor technology showcases her innovative spirit and dedication to advancing semiconductor devices. Her contributions are poised to impact the industry positively.