Portland, OR, United States of America

Yu-Lin Chao

USPTO Granted Patents = 4 

Average Co-Inventor Count = 3.3

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2021-2024

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4 patents (USPTO):Explore Patents

Title: Innovations of Yu-Lin Chao

Introduction

Yu-Lin Chao is a prominent inventor based in Portland, OR (US), known for her significant contributions to the field of memory devices and integrated circuits. With a total of four patents to her name, she has made remarkable advancements in technology that enhance the performance and efficiency of electronic devices.

Latest Patents

One of her latest patents is titled "Precise writing of multi-level weights to memory devices for compute-in-memory." This invention discloses systems and methods for precision writing of weight values to a memory capable of storing multiple levels in each cell. The embodiment includes logic to compare an electrical parameter read from a memory cell with a base reference and an interval reference, stopping the writing process once the electrical parameter is between the base reference and the base plus the interval reference. The interval may be determined using a greater number of levels than the number of stored levels, preventing possible overlap of read values due to memory device variations.

Another notable patent is "Metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements." This invention describes techniques for an integrated circuit that includes a MOSFET with a source area, a channel area, a gate electrode, and a drain area. The channel area features a first channel region with a dopant of a first concentration next to the source area, and a second channel region with a higher dopant concentration next to the drain area. The design includes a source electrode in contact with the source area, a gate oxide layer above the channel area, and a gate electrode above the gate oxide layer. This configuration allows for specific resistances to exist between the source electrode and the gate electrode, facilitating programming operations.

Career Highlights

Yu-Lin Chao is currently employed at Intel Corporation, where she continues to innovate and develop cutting-edge technologies. Her work has significantly impacted the field of electronics, particularly in memory technology and integrated circuits.

Collaborations

Throughout her career, Yu-Lin has collaborated with notable colleagues, including Sarvesh H Kulkarni and Vincent E Dorgan. These collaborations have further enhanced her research and development efforts, leading to groundbreaking inventions.

Conclusion

Yu-Lin Chao's contributions to the field of technology through her patents and innovations demonstrate her expertise and commitment to advancing electronic devices. Her work at Intel Corporation and collaborations with

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