Company Filing History:
1 out of 7,082 
1 out of 2 Years Active: 2002
Title: Innovations of Yu-Ju Yang
Introduction
Yu-Ju Yang is a notable inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of dynamic random access memory (DRAM) technology. With a total of 2 patents, his work focuses on enhancing the performance and reliability of memory devices.
Latest Patents
Yu-Ju Yang's latest patents include a method for increasing tolerance of contact extension alignment in COB DRAM. This method involves providing a substrate with a gate, bit line, and source/drain region, followed by the formation of an insulating layer. A dielectric layer is then deposited, and a contact hole is created to expose a portion of the source/drain region. The conductive layer is deposited, ensuring that the etching selectivity ratio is optimal. This innovative approach protects the electrode beneath the dielectric layer from etching during misalignment.
Another significant patent is the method for forming a capacitor of a DRAM having a wall protection structure. This method includes providing a substrate with word line structures and depositing a first dielectric layer. A first polysilicon layer is then added to form bit line contacts and bit lines. The process continues with the formation of a second dielectric layer and the creation of a capacitor contact opening. This method enhances the structural integrity of the capacitor node, ensuring its effectiveness in memory applications.
Career Highlights
Throughout his career, Yu-Ju Yang has worked with prominent companies, including United Microelectronics Corporation. His experience in the semiconductor industry has allowed him to develop innovative solutions that address critical challenges in memory technology.
Collaborations
Yu-Ju Yang has collaborated with talented individuals such as Yu-Hong Huang and Kuo-Yuh Yang. These partnerships have contributed to the advancement of his research and the successful development of his patents.
Conclusion
Yu-Ju Yang's contributions to DRAM technology through his innovative patents demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of memory devices, ensuring improved performance and reliability in the industry.