Miaoli, Taiwan

Yu-Hung Lin

This inventor holds 3 USPTO granted patents. Top assignee: Phison Electronics Corporation. Active years: 2024-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Hung Lin. Retrieved from https://idiyas.com/inventor/yu-hung-lin-4huz4nd6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 66.7

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024-2026

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3 patents (USPTO):Explore Patents

Title: Yu-Hung Lin: Innovator in Memory Technology

Introduction

Yu-Hung Lin is a prominent inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of memory technology, holding two patents that showcase his innovative approach to improving memory storage devices.

Latest Patents

Yu-Hung Lin's latest patents include a read voltage calibration method, a memory storage device, and a memory control circuit unit. The read voltage calibration method involves reading data from a physical unit using various read voltage levels and decoding the data to obtain error bit information. This process allows for the calibration of the default read voltage level based on the error information obtained. His inventions aim to enhance the reliability and efficiency of memory storage systems.

Career Highlights

Yu-Hung Lin is currently employed at Phison Electronics Corporation, a leading company in the memory storage industry. His work focuses on developing advanced memory control technologies that are crucial for modern computing applications.

Collaborations

Some of Yu-Hung Lin's notable coworkers include Szu-Wei Chen and An-Cin Li, who contribute to the innovative projects at Phison Electronics Corporation.

Conclusion

Yu-Hung Lin's contributions to memory technology through his patents and work at Phison Electronics Corporation highlight his role as a key innovator in the field. His advancements in read voltage calibration methods and memory control circuits are paving the way for more efficient memory storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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