This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yu-Fa Tu and His Schottky Barrier Diode Innovation.
Introduction
Yu-Fa Tu is an inventor associated with Hsinchu, Taiwan. His patent work includes a design intended to reduce leakage current in a Schottky barrier diode.
Latest Patents
Tu is named on one patent, 1 patent: “Schottky Barrier Diode (SBD) Leakage Current Blocking Structure.” The invention describes an SBD structure and a method for forming it. Its current-blocking feature is designed to inhibit leakage at the interface between the diode and shallow trench isolation regions surrounding its anode.
Career Highlights
Tu is associated with Taiwan Semiconductor Manufacturing Co., Ltd. The available information identifies his work on a semiconductor device structure focused on controlling leakage current.
Collaborations
Cheng-Hsien Wu and Chien-Lin Tseng are identified as Tu’s coworkers. Their names are provided as professional associations, though specific collaborative roles on this patent are not stated.
Conclusion
Yu-Fa Tu’s patent describes a targeted approach to limiting leakage in Schottky barrier diodes, reflecting his contribution to semiconductor device innovation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile