The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2026
Filed:
May. 01, 2023
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Cheng-Hsien Wu, Hsinchu, TW;
Chien-Lin Tseng, Zhubei, TW;
Sheng Yu Lin, Taoyuan, TW;
Ting-Chang Chang, Hsinchu, TW;
Yung-Fang Tan, Hsinchu, TW;
Yu-Fa Tu, Hsinchu, TW;
Wei-Chun Hung, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 64/64 (2025.01); H10W 10/00 (2026.01); H10W 10/10 (2026.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H10D 64/64 (2025.01); H10W 10/011 (2026.01); H10W 10/10 (2026.01);
Abstract
Embodiments include a Schottky barrier diode (SBD) structure and method of forming the same, the SBD structure including a current blockage feature to inhibit current from leaking at an interface with a shallow trench isolation regions surrounding an anode region of the SBD structure.