Youhei Ono

Title: Youhei Ono: Inventor in Semiconductor Etching

Introduction

Youhei Ono is an inventor based in Chigasaki, Japan. His patent work includes an etching method that uses plasma and fluorine-containing chemistry to process a subject in a chamber.

Latest Patents

Ono is associated with 1 patent, titled “Etching Method.” The method generates reactive plasma containing hydrogen and nitrogen in a discharge tube with an inorganic-oxide inner surface, then supplies that plasma to a connected processing chamber. In the chamber, the plasma and a fluorine-containing gas are used to generate a precursor containing fluorine and hydrogen, which is supplied to the etching subject. The method also treats the discharge tube’s inner surface with hydrogen plasma followed by oxygen plasma.

Career Highlights

Ono is associated with ULVAC, Inc., a company whose work includes vacuum technologies and equipment. His patent describes a plasma-based approach to etching and to treating the discharge tube’s inner surface.

Collaborations

Ono’s listed coworker is Jinhyeok Son. Their association reflects a professional connection in the context of the patent information provided.

Conclusion

Youhei Ono’s patent presents a detailed plasma-assisted etching method, highlighting his contribution to semiconductor processing technology.