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For the Inventor, By the Inventor

San Jose, CA, United States of America

You Feng Zheng

This inventor holds 9 USPTO granted patents. Top assignee: Headway Technologies, Incorporated. Active years: 2003-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: You Feng Zheng. Retrieved from https://idiyas.com/inventor/you-feng-zheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 9

Average Co-Inventor Count = 4.3

ph-index = 4

Forward Citations = 42(Granted Patents)


Company Filing History:

goldMedal9 out of 1,232 
 
Headway Technologies, Incorporated
 patents

Years Active: 2003-2007

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9 patents (USPTO):Explore Patents
1. 7184248 - Synthetic pattern exchange configuration for side reading reduction (2007-02-27),
2. 7106558 - Biased spin valve head with canted adjacent layer and current channeling layer (2006-09-12),
3. 7010848 - Synthetic pattern exchange configuration for side reading reduction (2006-03-14),
4. 6857180 - Method for fabricating a patterned synthetic longitudinal exchange biased GMR sensor (2005-02-22),
5. 6816346 - Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias (2004-11-09),
6. 6776883 - Process of manufacturing a magnetic read head (2004-08-17),
7. 6721143 - Ferromagnetic/antiferromagnetic bilayer, including decoupler, for longitudinal bias (2004-04-13),
8. 6665154 - Spin valve head with a current channeling layer (2003-12-16),
9. 6594124 - Canted adjacent layer stabilized SV heads (2003-07-15),

Title: The Innovative Contributions of You Feng Zheng

Introduction

You Feng Zheng is a prominent inventor based in San Jose, CA, known for his significant contributions to the field of magnetic sensor technology. With a total of 9 patents to his name, Zheng has made remarkable advancements that enhance the performance and efficiency of magnetic read heads.

Latest Patents

Zheng's latest patents include a "Synthetic pattern exchange configuration for side reading reduction." This invention features a patterned, synthetic, longitudinally exchange biased GMR sensor that boasts a narrow effective track width and reduced side reading. The sensor's advantageous properties are achieved by satisfying a novel relationship between the magnetizations of the ferromagnetic free layer and the ferromagnetic biasing layer. This relationship allows for the optimal thicknesses of these layers to be determined across a wide range of ferromagnetic materials and exchange coupling materials. Another notable patent is the "Biased spin valve head with canted adjacent layer and current channeling layer." This design incorporates a current channeling layer with stabilizing longitudinal bias layers, which are canted relative to the free layer easy axis and the pinned layer. This innovative approach reduces side reading characteristics and enhances the narrow current flow profile at the side region.

Career Highlights

Zheng is currently employed at Headway Technologies, Incorporated, where he continues to push the boundaries of magnetic sensor technology. His work has been instrumental in developing solutions that address the challenges faced in the industry.

Collaborations

Throughout his career, Zheng has collaborated with notable colleagues, including Kochan Ju and Simon H Liao. These partnerships have fostered an environment of innovation and creativity, leading to the development of cutting-edge technologies.

Conclusion

You Feng Zheng's contributions to the field of magnetic sensor technology are significant and impactful. His innovative patents and collaborative efforts continue to shape the future of this industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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