The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2005
Filed:
Mar. 22, 2002
Cheng T. Horng, San Jose, CA (US);
Min LI, Fremont, CA (US);
Ru-ying Tong, San Jose, CA (US);
Yun-fei LI, Fremont, CA (US);
You Feng Zheng, San Jose, CA (US);
Simon Liao, Fremont, CA (US);
Kochan Ju, Fremont, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Cheng T. Horng, San Jose, CA (US);
Min Li, Fremont, CA (US);
Ru-Ying Tong, San Jose, CA (US);
Yun-Fei Li, Fremont, CA (US);
You Feng Zheng, San Jose, CA (US);
Simon Liao, Fremont, CA (US);
Kochan Ju, Fremont, CA (US);
Cherng Chyi Han, San Jose, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.