The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2006
Filed:
Feb. 15, 2002
Min LI, Fremont, CA (US);
You Feng Zheng, San Jose, CA (US);
Simon Liao, Fremont, CA (US);
Kochan Ju, Fremont, CA (US);
Min Li, Fremont, CA (US);
You Feng Zheng, San Jose, CA (US);
Simon Liao, Fremont, CA (US);
Kochan Ju, Fremont, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F) and the ferromagnetic biasing layer (F) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is M/M=(J+J)/J, where Jis the synthetic coupling energy between Fand Fand Jis the exchange energy between Fand an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become M/M=1.