Shizuoka, Japan

Yoshiyasu Tajima

This inventor holds 1 USPTO granted patent. Top assignee: Ulvac, Inc.. Active years: 2014.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Yoshiyasu Tajima

Introduction

Yoshiyasu Tajima is a notable inventor based in Shizuoka, Japan. He has made significant contributions to the field of vacuum processing technology. His innovative work has led to the development of a unique patent that addresses challenges in silicon substrate processing.

Latest Patents

Tajima holds a patent for a vacuum processing method and apparatus. This invention introduces a processing gas to remove an oxide film from the surface of a silicon substrate. F radicals are utilized to etch a silicon layer, followed by the introduction of NH gas, N gas, and NF gas. This process allows NHF to act on the oxidized surface, resulting in the formation of (NH)SiF. The resulting (NH)SiF is sublimated to eliminate by-products such as SiOF and SiOH from the silicon substrate's surface. This innovative approach enhances the efficiency and effectiveness of silicon processing.

Career Highlights

Tajima is currently employed at Ulvac, Inc., a company known for its advanced vacuum technology solutions. His work at Ulvac has positioned him as a key player in the development of innovative processing methods. His expertise in vacuum processing has contributed to the company's reputation for excellence in the industry.

Collaborations

Tajima has collaborated with esteemed colleagues such as Seiichi Takahashi and Kyuzo Nakamura. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yoshiyasu Tajima's contributions to vacuum processing technology exemplify the spirit of innovation. His patent and work at Ulvac, Inc. highlight his commitment to advancing the field. Through collaboration with talented colleagues, he continues to push the boundaries of what is possible in silicon substrate processing.

Profile summary based on public USPTO records.
Please report any incorrect information to [email protected]
Loading…