The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Mar. 24, 2010
Applicants:
Yoshiyasu Tajima, Shizuoka, JP;
Seiichi Takahashi, Shizuoka, JP;
Kyuzo Nakamura, Kanagawa, JP;
Inventors:
Assignee:
Ulvac, Inc., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01);
U.S. Cl.
CPC ...
Abstract
A processing gas is introduced to remove an oxide film on the surface of a silicon substrate. F radicals are allowed to act on the surface of the silicon substrate to etch a silicon layer. Then, NHgas, Ngas and NFgas are introduced, allowing NHFto act on the oxidized surface of the silicon substrate, thereby forming (NH)SiF. The resulting (NH)SiFis sublimated to remove by-products (SiOF, SiOH) on the surface of the silicon substrate