Yokohama, Japan

Yoshito Ozaki

This inventor holds 1 USPTO granted patent. Top assignee: Lasertec Gmbh. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshito Ozaki. Retrieved from https://idiyas.com/inventor/yoshito-ozaki-ovxvjdbr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yoshito Ozaki

Introduction

Yoshito Ozaki is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of defect inspection technology. His work focuses on enhancing the accuracy and efficiency of defect detection in semiconductor materials.

Latest Patents

Yoshito Ozaki holds a patent for a defect inspection apparatus and method. This innovative apparatus includes an irradiation optical system designed to irradiate a sample that consists of a SiC substrate, a buffer layer, and a drift layer. The system utilizes excitation light to generate photoluminescence, which is then filtered and detected. The image processing unit plays a crucial role in forming images from the detected light and discriminating defects based on specific calculations.

Career Highlights

Ozaki is currently employed at Lasertec GmbH, where he continues to develop advanced technologies in defect inspection. His expertise in this area has positioned him as a key figure in the industry. He has demonstrated a commitment to improving the quality control processes in semiconductor manufacturing.

Collaborations

Yoshito collaborates with Shota Fujiki, who is also involved in the field of defect inspection technology. Their partnership enhances the research and development efforts at Lasertec GmbH.

Conclusion

Yoshito Ozaki's contributions to defect inspection technology exemplify the importance of innovation in the semiconductor industry. His patent and ongoing work continue to influence advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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