The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Apr. 05, 2024
Applicant:

Lasertec Corporation, Kanagawa, JP;

Inventors:

Shota Fujiki, Yokohama, JP;

Yoshito Ozaki, Yokohama, JP;

Assignee:

LASERTEC CORPORATION, Yokohama, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01N 21/88 (2006.01); G01N 21/359 (2014.01); G01N 21/64 (2006.01); G01N 21/84 (2006.01); G01N 21/95 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
G01N 21/8851 (2013.01); G01N 21/359 (2013.01); G01N 21/6489 (2013.01); G01N 21/9501 (2013.01); G01N 21/9505 (2013.01); G01N 2021/646 (2013.01); G01N 2021/8477 (2013.01); G01N 2021/8861 (2013.01); G01N 2021/8887 (2013.01); H01L 22/12 (2013.01); H01L 22/24 (2013.01);
Abstract

A defect inspection apparatus according to the present embodiment includes: an irradiation optical system configured to irradiate a sample including a SiC substrate, a buffer layer formed on the SiC substrate, and a drift layer formed on the buffer layer with excitation light; a filter unit configured to control a wavelength band to transmit photoluminescence light generated from the sample; a detection optical system configured to detect the photoluminescence light transmitted through the filter unit; and an image processing unit configured to form an image from the detected photoluminescence light and to discriminate a defect captured in the formed image, and the image processing unit discriminates the defect based on whether a length of the defect is L=(D+D)/tan θ or L=D/tan θ.


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