Hitachinaka, Japan

Yoshitaka Otsu

This inventor holds 8 USPTO granted patents. Top assignee: Renesas Electronics Corporation. Active years: 2013-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshitaka Otsu. Retrieved from https://idiyas.com/inventor/yoshitaka-otsu-h8ih2ahq

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 43(Granted Patents)


Location History:

  • Kanagawa, JP (2013)
  • Itami, JP (2013 - 2014)
  • Hitachinaka, JP (2017 - 2019)
  • Tokyo, JP (2018 - 2021)

Company Filing History:


Years Active: 2013-2021

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8 patents (USPTO):Explore Patents

Title: Innovations by Yoshitaka Otsu

Introduction

Yoshitaka Otsu is a prominent inventor based in Hitachinaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on developing advanced semiconductor devices and manufacturing methods that enhance performance and efficiency.

Latest Patents

One of his latest patents is a semiconductor device and method for manufacturing the same. This innovation eliminates the need for high fillability through a simple process. It features a high breakdown voltage lateral MOS transistor, which includes a source region and a drain region completed on the surface of a semiconductor substrate. A trench surrounds the transistor when viewed from above, and an insulating film is formed over the transistor and in the trench, creating an air-gap space. Contact holes are made in an interlayer insulating film to reach the source and drain regions of the transistor.

Another notable patent involves a semiconductor device and method for manufacturing the same, which includes a first concave portion extending inside a semiconductor substrate from its main surface. An insulating film is formed over the main surface and the walls of the concave portion, creating a capped hollow. A first hole portion is formed in the insulating film to reach the hollow, while a second hole portion connects to the conductive portion from the upper surface of the insulating film. Both hole portions are created using the same etching treatment.

Career Highlights

Yoshitaka Otsu is currently employed at Renesas Electronics Corporation, where he continues to innovate in semiconductor technology. His work has significantly impacted the industry, leading to advancements in device performance and manufacturing processes.

Collaborations

Throughout his career, Otsu has collaborated with notable colleagues, including Katsumi Morii and Kazuma Onishi. These partnerships have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Yoshitaka Otsu's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of semiconductor devices and manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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