The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Sep. 15, 2010
Kazuma Onishi, Itami, JP;
Yoshitaka Otsu, Itami, JP;
Hiroshi Kimura, Kanagawa, JP;
Tetsuya Nitta, Kanagawa, JP;
Shinichiro Yanagi, Kanagawa, JP;
Katsumi Morii, Itami, JP;
Kazuma Onishi, Itami, JP;
Yoshitaka Otsu, Itami, JP;
Hiroshi Kimura, Kanagawa, JP;
Tetsuya Nitta, Kanagawa, JP;
Shinichiro Yanagi, Kanagawa, JP;
Katsumi Morii, Itami, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
A semiconductor device which eliminates the need for high fillability through a simple process and a method for manufacturing the same. A high breakdown voltage lateral MOS transistor including a source region and a drain region is completed on a surface of a semiconductor substrate. A trench which surrounds the transistor when seen in a plan view is made in the surface of the semiconductor substrate. An insulating film is formed over the transistor and in the trench so as to cover the transistor and form an air-gap space in the trench. Contact holes which reach the source region and drain region of the transistor respectively are made in an interlayer insulating film.