The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 29, 2013
Filed:
Jan. 20, 2011
Katsumi Morii, Kanagawa, JP;
Yoshitaka Otsu, Kanagawa, JP;
Kazuma Onishi, Kanagawa, JP;
Tetsuya Nitta, Kanagawa, JP;
Tatsuya Shiromoto, Kanagawa, JP;
Shigeo Tokumitsu, Kanagawa, JP;
Katsumi Morii, Kanagawa, JP;
Yoshitaka Otsu, Kanagawa, JP;
Kazuma Onishi, Kanagawa, JP;
Tetsuya Nitta, Kanagawa, JP;
Tatsuya Shiromoto, Kanagawa, JP;
Shigeo Tokumitsu, Kanagawa, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
To provide a semiconductor device that can be manufactured using a simple process without ensuring a high embedding property; and a manufacturing method of the device. In the manufacturing method of the semiconductor device according to the invention, a semiconductor substrate having a configuration obtained by stacking a support substrate, a buried insulating film, and a semiconductor layer in order of mention is prepared first. Then, an element having a conductive portion is completed over the main surface of the semiconductor layer. A trench encompassing the element in a planar view and reaching the buried insulating film from the main surface of the semiconductor layer is formed. A first insulating film (interlayer insulating film) is formed over the element and in the trench to cover the element and form an air gap in the trench, respectively. Then, a contact hole reaching the conductive portion of the element is formed in the first insulating film.