Nisshin, Japan

Yoshitaka Nagasato

This inventor holds 6 USPTO granted patents and 1 published patent application. Top assignees: Toyota Jidosha Kabushiki Kaisha, Denso Corporation, Mirise Technologies Corporation. Active years: 2017-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshitaka Nagasato. Retrieved from https://idiyas.com/inventor/yoshitaka-nagasato

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 6 

% Patents Active = 100.0

Average Co-Inventor Count = 4.9

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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6 patents (USPTO):Explore Patents

Title: Innovations by Yoshitaka Nagasato

Introduction

Yoshitaka Nagasato is a prominent inventor based in Nisshin, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on advanced manufacturing methods that enhance the efficiency and performance of semiconductor devices.

Latest Patents

One of his latest patents is a manufacturing method of a semiconductor device. This method includes a trench forming step, a laser irradiation step, and a peeling step. In the trench forming step, a trench is formed on a first main surface of a semiconductor substrate that has a device structure. The laser irradiation step involves irradiating a laser from a second main surface of the substrate to a plane surface at a predetermined depth. The peeling step allows for the device layer to be peeled off from the substrate along the plane surface where the laser is irradiated. This process can be performed with the trenches either unfilled or filled with a material that has a lower coefficient of thermal expansion than the substrate.

Another notable patent involves a method for manufacturing a semiconductor device and a semiconductor wafer. This method includes preparing a processed wafer with a gallium nitride (GaN) wafer and an epitaxial layer. It also involves forming a device constituent part adjacent to the front surface provided by the epitaxial layer and creating a modified layer inside the processed wafer by applying a laser beam from the back surface. The processed wafer includes a reflective layer that reflects the laser beam, which is positioned at a predetermined distance from the planned formation position of the modified layer.

Career Highlights

Yoshitaka Nagasato has worked with notable companies such as Toyota Motor Corporation and Denso Corporation. His experience in these leading organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, he has collaborated with esteemed colleagues, including Hidemoto Tomita and Masakazu Kanechika. These collaborations have further enriched his work and contributions to the field.

Conclusion

Yoshitaka Nagasato's innovative approaches to semiconductor manufacturing have positioned him as a key figure in the industry. His patents reflect a commitment to advancing technology and improving device performance. His contributions will continue to influence the future of semiconductor development.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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