The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 19, 2018

Filed:

May. 03, 2016
Applicant:

Toyota Jidosha Kabushiki Kaisha, Toyota-shi, Aichi-ken, JP;

Inventors:

Hidemoto Tomita, Toyota, JP;

Yoshitaka Nagasato, Toyota, JP;

Takashi Okawa, Nisshin, JP;

Masakazu Kanechika, Nagakute, JP;

Hiroyuki Ueda, Nagakute, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/205 (2006.01); H01L 29/872 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 23/34 (2006.01); H01L 21/8252 (2006.01); G01K 7/16 (2006.01); H01L 29/778 (2006.01); G01K 7/01 (2006.01); H01L 29/20 (2006.01); H01L 21/762 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); G01K 7/01 (2013.01); G01K 7/16 (2013.01); H01L 21/30612 (2013.01); H01L 21/8252 (2013.01); H01L 23/34 (2013.01); H01L 27/0605 (2013.01); H01L 29/205 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/872 (2013.01); H01L 21/762 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01);
Abstract

A semiconductor device is capable of accurately sensing a temperature of a semiconductor element incorporated in a semiconductor substrate. The semiconductor device includes a temperature sensor. The temperature sensor includes a first nitride semiconductor layer of p-type, a first sense electrode, and a second sense electrode. The first sense electrode and the second sense electrode are located to be capable of passing an electric current between the first sense electrode and the second sense electrode through the first nitride semiconductor layer.


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