The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2025

Filed:

Aug. 18, 2022
Applicants:

Denso Corporation, Kariya, JP;

Toyota Jidosha Kabushiki Kaisha, Toyota, JP;

Mirise Technologies Corporation, Nisshin, JP;

Inventors:

Katsuhiro Kutsuki, Nagakute, JP;

Keita Kataoka, Nagakute, JP;

Daigo Kikuta, Nagakute, JP;

Hiroki Miyake, Nisshin, JP;

Shuhei Ichikawa, Nisshin, JP;

Yoshitaka Nagasato, Nisshin, JP;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 62/80 (2025.01); H01L 21/465 (2006.01); H10D 8/60 (2025.01);
U.S. Cl.
CPC ...
H10D 8/60 (2025.01); H01L 21/465 (2013.01); H10D 62/80 (2025.01);
Abstract

In a surface treatment method for a gallium oxide-based semiconductor substrate, a surface of the gallium oxide-based semiconductor substrate is flattened by dry etching with a self-bias of 150 V or more. After the surface of the gallium oxide-based semiconductor substrate is flattened, the surface of the gallium oxide-based semiconductor substrate is washed with a chemical solution containing HSOto expose a step terrace structure on the surface of the gallium oxide-based semiconductor substrate.


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