Company Filing History:
Years Active: 2002-2004
Title: The Innovative Work of Yoshio Enosawa
Introduction
Yoshio Enosawa is a notable inventor based in Miyagi-ken, Japan, recognized for his contributions to the semiconductor industry. With two patents to his name, his work significantly advances the technology behind high voltage MOSFET devices.
Latest Patents
Yoshio Enosawa's latest inventions include two pioneering methods for manufacturing high voltage MOSFET semiconductor devices. The first patent details a method for enhancing charge controllability in a high voltage MOSFET device. This method involves creating an n-well region with a p-top layer of opposite conductivity, which enhances the device's characteristics. The p-top layer is implanted through a thin gate oxide and diffused into the silicon during the source/drain anneal process. By not allowing field oxide to grow on the top of the extended drain region, except for two islands near the source and drain diffusion regions, Enosawa's design ensures a shallow p-top that achieves low on-resistance while maintaining the desired breakdown voltage.
The second patent presents a method for producing a high voltage MOSFET device with reduced on-resistance. In this design, the well region contains two areas with differing dopant concentrations. The first area is characterized by high dopant concentration, while the second area exhibits low concentration. This configuration, particularly the lower doping concentration in the underlying gate region, improves breakdown voltage during blocking and decreases on-resistance when the device is active. Additionally, the incorporation of a p-top layer, driven into the well region through high-temperature annealing in an inert atmosphere, further enhances the performance of the MOSFET device.
Career Highlights
Yoshio Enosawa has made a significant impact during his tenure at various companies, particularly at Semiconductor Components Industries, LLC. His experiences in the semiconductor sector have undoubtedly informed his innovative approaches to device manufacturing and design.
Collaborations
Throughout his career, Enosawa has collaborated with esteemed colleagues, such as Mohamed Imam and Joe Fulton. This synergy among inventors and engineers in the field has proven essential for nurturing an environment of innovation and advancement in semiconductor technology.
Conclusion
Yoshio Enosawa's inventive spirit and technical expertise have contributed significantly to the development of high voltage MOSFET devices. With his focus on enhancing device performance through innovative manufacturing methodologies, Enosawa continues to be a vital figure in the semiconductor industry. His work serves as an inspiration for future inventors aiming to push the boundaries of technology.