The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 10, 2002
Filed:
Aug. 03, 2001
Mohamed Imam, Tempe, AZ (US);
Joe Fulton, Chandler, AZ (US);
Zia Hossain, Tempe, AZ (US);
Masami Tanaka, Fukushima, JP;
Taku Yamamoto, Ishidou-machi, JP;
Yoshio Enosawa, Miyagi-ken, JP;
Katsuya Yamazaki, Monden-machi, JP;
Evgueniy N. Stefanov, Vieille Toulouse, FR;
Semiconductor Components Industries LLC, Phoenix, AZ (US);
Abstract
A high voltage MOSFET device ( ) has a well region ( ) with two areas. The first area ( ) has a high dopant concentration and the second area ( ) has a low dopant concentration. Inside the well region a region of a secondary conductivity type ( ) is formed. The second area ( ) is typically underlying a gate region ( ). The lower doping concentration in that area helps to increase the breakdown voltage when the semiconductor device is blocking voltage and helps to decrease the on-resistance when the semiconductor device is in the “on” state. The MOSFET device further has a p-top layer ( ) which is disposed on the top surface of the well region and then driven into the well region by annealing the MOSFET device at a high temperature in an inert atmosphere.