Yoshikazu Hosokawa

Title: Innovations of Yoshikazu Hosokawa

Introduction

Yoshikazu Hosokawa is a prominent inventor based in Hitachiota, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work primarily focuses on thin film transistors and semiconductor devices.

Latest Patents

One of his latest patents is for a thin film transistor formed on an insulating substrate. This invention discloses a design where metal silicide layers are integrated into a thin film made of monocrystalline, polycrystalline, or amorphous semiconductor material, serving as source and drain regions. Additionally, the gate electrode incorporates a metal silicide layer. Another notable patent is for a thin film semiconductor device and method of manufacturing the same. This patent describes complementary thin film transistors (C-TFT) formed on an insulating substrate, which includes a pair of highly resistive n-type silicon islands and a pair of heavily doped n-type regions that form the source and drain regions of the n-channel TFT. The manufacturing process for these complementary TFTs is significantly simplified.

Career Highlights

Yoshikazu Hosokawa is associated with Hitachi, Ltd., a leading company in technology and innovation. His work has been instrumental in advancing the capabilities of thin film transistors, which are crucial for various electronic applications.

Collaborations

He has collaborated with notable coworkers, including Nobutake Konishi and Akio Mimura, contributing to the development of innovative semiconductor technologies.

Conclusion

Yoshikazu Hosokawa's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic devices.