The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 18, 1976
Filed:
May. 03, 1974
Tatsuya Kamei, Hitachi, JA;
Yoshikazu Hosokawa, Hitachi, JA;
Hitachi, Ltd., , JA;
Abstract
A thyristor highly proof against dv/dt in which to prevent malignition due to the displacement current produced by the application of an abruptly rising forward voltage or the internal leakage current increasing with the temperature rise of the semiconductor substrate, an auxiliary electrode is provided to the intermediate region adjacent to one of the outermost regions of the semiconductor substrate to which two main electrodes, anode and cathode, are provided, the auxiliary electrode and the main electrode on the one outermost region being connected electrically, and a control region having the opposite conductivity type to that of the intermediate region is formed in the intermediate region between the auxiliary electrode and the main electrode on the one outermost region, the control region being provided with a gate electrode. By supplying a control signal to the gate electrode a depletion layer is produced in the intermediate region such that the path of the control signal from the gate electrode to the auxiliary electrode is completely blocked and the control signal is all utilized for the ignition. The displacement current and the leakage current are bypassed from the auxiliary electrode to the main electrode on the one outermost region.