The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1990
Filed:
Oct. 28, 1987
Applicant:
Inventors:
Akio Mimura, Katsuta, JP;
Yoshikazu Hosokawa, Hitachiota, JP;
Takaya Suzuki, Katsuta, JP;
Takashi Aoyama, Ibaraki, JP;
Nobutake Konishi, Hitachiota, JP;
Yutaka Misawa, Katsuta, JP;
Kenji Miyata, Katsuta, JP;
Assignee:
Hitachi, Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 237 ; 357-2 ; 357 59 ; 357 67 ;
Abstract
A thin film transistor formed on an insulating sulstrate is disclosed in which metal silicide layers are formed in a thin film made of a monocrystalline, polycrystalline, or amorphous semiconductor material, to be used as source and drain regions, and further a gate electrode includes a metal silicide layer.