Fukuoka, Japan

Yoshihiro Shinozaki

This inventor holds 11 USPTO granted patents and 1 published patent application. Top assignees: Renesas Technology Corp., Hitachi Ulsi Systems Co., Ltd., Renesas Electronics Corporation. Active years: 2005-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Shinozaki. Retrieved from https://idiyas.com/inventor/yoshihiro-shinozaki

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 11 

% Patents Active = 90.9

Average Co-Inventor Count = 5.1

ph-index = 6

Forward Citations = 140(Granted Patents)


Company Filing History:


Years Active: 2005-2015

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11 patents (USPTO):Explore Patents

Title: Innovator Spotlight: Yoshihiro Shinozaki and His Contributions to Semiconductor Technology

Introduction: Yoshihiro Shinozaki, a prominent inventor based in Fukuoka, Japan, has made significant strides in the field of semiconductor technology. With a remarkable portfolio of 11 patents, Shinozaki has demonstrated an unwavering commitment to advancing integrated circuit devices, particularly in the realm of static random-access memory (SRAM).

Latest Patents: Among his latest innovations, Shinozaki has developed a semiconductor integrated circuit device that addresses the challenges of low supply voltage while meeting the stringent requirements for both the static noise margin (SNM) and the write margin. This invention includes multiple static memory cells aligned with various word lines and complimentary bit lines. Additionally, it features multiple memory cell power supply lines, each providing operational voltage to the corresponding memory cells. The device is equipped with several power supply circuits made up of resistive units that deliver power supply voltage to the memory cell power supply lines, as well as a pre-charge circuit that supplies a pre-charge voltage corresponding to the power supply voltage to the complimentary bit lines. The memory cell power supply lines are designed to have coupling capacitances that effectively transmit write signals on the corresponding complimentary bit lines, showcasing Shinozaki's innovative approach to enhancing memory performance.

Career Highlights: Throughout his career, Yoshihiro Shinozaki has held key positions at renowned companies such as Renesas Technology Corporation and SuperH, Inc. His work in these organizations has significantly impacted the semiconductor industry, particularly in the development of high-performance integrated circuit solutions.

Collaborations: Shinozaki has collaborated with talented professionals in the field, including Noriaki Maeda and Masanao Yamaoka. Together, they have contributed to advancements in semiconductor technology, fostering an environment of innovation and excellence.

Conclusion: Yoshihiro Shinozaki stands as a testament to the power of innovation within the semiconductor industry. His contributions, particularly in SRAM technology and integrated circuit devices, have paved the way for enhanced performance and efficiency. As an inventor with a solid track record, Shinozaki continues to inspire the next generation of engineers and inventors in Japan and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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