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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Yoon-Joo Eom

USPTO Granted Patents = 16 

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 88(Granted Patents)


Company Filing History:

goldMedal16 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2015-2024

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16 patents (USPTO):Explore Patents
1. 12154616 - Memory device and operation method thereof (2024-11-26),
2. 11862234 - Memory device and operation method thereof (2024-01-02),
3. 11721391 - Multi channel semiconductor device having multi dies and operation method thereof (2023-08-08),
4. 11443794 - Multi channel semiconductor device having multi dies and operation method thereof (2022-09-13),
5. 11195571 - Memory device and method with data input (2021-12-07),
6. 10666467 - Memory device and operation method thereof (2020-05-26),
7. 10361699 - Memory modules, memory systems including the same, and methods of calibrating multi-die impedance of the memory modules (2019-07-23),
8. 10255969 - Multi channel semiconductor device having multi dies and operation method thereof (2019-04-09),
9. 10062430 - Multi channel semiconductor device having multi dies and operation method thereof (2018-08-28),
10. 9899075 - Multi channel semiconductor device having multi dies and operation method thereof (2018-02-20),
11. 9742355 - Buffer circuit robust to variation of reference voltage signal (2017-08-22),
12. 9355706 - Output circuit for implementing high speed data transmition (2016-05-31),
13. 9196325 - Integrated circuit with on die termination and reference voltage generation and methods of using the same (2015-11-24),
14. 9183902 - Input data alignment circuit and semiconductor device including the same (2015-11-10),
15. 9105317 - Memory system capable of calibrating output voltage level of semiconductor memory device and method of calibrating output voltage level of semiconductor memory device (2015-08-11),

Title: Yoon-Joo Eom: Innovator in Memory Device Technology

Introduction

Yoon-Joo Eom is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of memory devices, holding a total of 16 patents. His innovative work has advanced the technology used in data storage and processing.

Latest Patents

Among his latest patents is a memory device and operation method that includes a first data line driver circuit. This circuit generates a first reference voltage set based on a first code and a second code associated with a first data line. It determines the bit values of the first input data received through the first data line based on the first reference voltage set. Additionally, a second data line driver circuit generates a second reference voltage set. The reference voltages utilize a decision feedback equalization (DFE) technique to minimize bit errors caused by inter-symbol interference.

Career Highlights

Yoon-Joo Eom has established himself as a key figure in the technology sector, particularly through his work at Samsung Electronics Co., Ltd. His expertise in memory devices has positioned him as a leader in innovation within the company.

Collaborations

He has collaborated with notable coworkers, including Joon-Young Park and Yongcheol Bae, contributing to various projects that enhance memory technology.

Conclusion

Yoon-Joo Eom's contributions to memory device technology reflect his dedication to innovation and excellence. His patents and collaborative efforts continue to shape the future of data storage solutions.

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