Ying Yan

Title: Innovations of Inventor Ying Yan

Introduction

Ying Yan is a prominent inventor based in Shanghai, China. He holds a total of 9 patents that showcase his contributions to the field of memory technology. His innovative work has significantly impacted the design and functionality of programmable memory cells.

Latest Patents

One of his latest patents is a one-time programmable memory cell. This application discloses a memory cell that includes one anti-fuse programmable transistor, one fuse, and two control transistors. The design allows for direct error bit correction through reprogramming, simplifying circuit and layout design while requiring a smaller layout area. This innovation also enhances reliability and safety. Another notable patent is a fuse link programming cell, which comprises two efuse units and a mode control tube. This unit features a complex arrangement of fuses and MOS transistors that facilitate efficient programming and correction processes.

Career Highlights

Ying Yan has worked with notable companies such as SAP AG and Shanghai Huali Microelectronics Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, Ying Yan has collaborated with talented individuals, including Jianming Jin and Yan Li. These partnerships have fostered a creative environment that has led to significant advancements in his field.

Conclusion

Ying Yan's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of programmable memory solutions.