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For the Inventor, By the Inventor

Shanghai, China

Ying Yan

This inventor holds 12 USPTO granted patents and 6 published patent applications. Top assignees: Sap Ag, Shanghai Huali Integrated Circuit Corporation, Shanghai Huali Microelectronics Corporation. Active years: 2012-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ying Yan. Retrieved from https://idiyas.com/inventor/ying-yan-bewn5f2y

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12 

% Patents Active = 83.3

Average Co-Inventor Count = 1.6

ph-index = 4

Forward Citations = 53(Granted Patents)


Location History:

  • Shaghai, CN (2012)
  • Shanghai, CN (2012 - 2024)

Company Filing History:

goldMedal4 out of 3,607 
 
Sap Ag
 patents
silverMedal4 out of 134 
 
Shanghai Huali Integrated Circuit Corporation
 patents
bronzeMedal4 out of 156 
 
Shanghai Huali Microelectronics Corporation
 patents

Years Active: 2012-2026

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12 patents (USPTO):Explore Patents
1. 12626774 - Distributed power supply switching circuit for efuse memory (2026-05-12),
2. 12592292 - Efuse unit and application circuit thereof (2026-03-31),
3. 12567473 - Efuse unit and application circuit thereof (2026-03-03),
4. 12406734 - One time programmable memory cell (2025-09-02),
5. 12198771 - Fuse link programming cell, programming circuit, control circuit, and array (2025-01-14),
6. 11973030 - Layout structure of eFuse unit (2024-04-30),
7. 11257557 - One-time programmable memory and an operation method thereof (2022-02-22),
8. 11183257 - Programmable memory (2021-11-23),
9. 8868497 - Correlation aware synchronization for near real-time decision support (2014-10-21),
10. 8433725 - Scheduling for fast response multi-pattern matching over streaming events (2013-04-30),
11. 8332390 - Information value-driven near real-time decision support (2012-12-11),
12. 8180801 - Unified window support for event stream data management (2012-05-15),

Title: Innovations of Inventor Ying Yan

Introduction

Ying Yan is a prominent inventor based in Shanghai, China. He holds a total of 12 patents that showcase his contributions to the field of memory technology. His innovative work has significantly impacted the design and functionality of programmable memory cells.

Latest Patents

One of his latest patents is a one-time programmable memory cell. This application discloses a memory cell that includes one anti-fuse programmable transistor, one fuse, and two control transistors. The design allows for direct error bit correction through reprogramming, simplifying circuit and layout design while requiring a smaller layout area. This innovation also enhances reliability and safety. Another notable patent is a fuse link programming cell, which comprises two efuse units and a mode control tube. This unit features a complex arrangement of fuses and MOS transistors that facilitate efficient programming and correction processes.

Career Highlights

Ying Yan has worked with notable companies such as SAP AG and Shanghai Huali Microelectronics Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Throughout his career, Ying Yan has collaborated with talented individuals, including Jianming Jin and Yan Li. These partnerships have fostered a creative environment that has led to significant advancements in his field.

Conclusion

Ying Yan's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of programmable memory solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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