The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 23, 2021
Filed:
Nov. 19, 2020
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Ying Yan, Shanghai, CN;
Jianming Jin, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
The present application discloses a programmable memory, wherein an anti-fuse unit thereof is formed by adding an efuse between an anti-fuse programming transistor and a control transistor of a conventional anti-fuse unit such that the anti-fuse unit can be programmed twice, that is, normal programming can be implemented by breaking down a gate-source insulation layer of the anti-fuse programming transistor, and correction programming can be further implemented by fusing the efuse such that correction programming can be performed on a normal programming result, thereby changing a logical state of the normally programmed anti-fuse unit. For the programmable memory, a reprogramming method can be directly used to correct an error bit, thereby simplifying circuit and layout designs, resulting in a smaller layout area and higher reliability, increasing the applicability and flexibility, while retaining original features of reliable and safe data of the anti-fuse unit.