Ying W Go

Title: The Innovative Journey of Ying W Go: A Pioneer in Memory Cell Technology

Introduction

Ying W Go, based in Palo Alto, California, is a distinguished inventor recognized for his contributions to the field of non-volatile memory technology. With an impressive portfolio of 10 patents, his work primarily focuses on the intricate designs and manufacturing methods of memory cells that revolutionize data storage.

Latest Patents

Among Ying W Go's most significant inventions are two notable patents that showcase his expertise in memory technology. The first patent describes a "Memory array of non-volatile electrically alterable memory cells for storing multiple data." This invention introduces a unique memory cell design featuring a control gate positioned laterally between two floating gates, each capable of holding distinct data. The innovative configuration allows for the erasure and programming of each floating gate through the strategic application of voltages.

The second patent outlines a "Method for manufacturing a non-volatile electrically alterable memory cell that stores multiple data." This self-aligned manufacturing approach for electrically alterable memory devices involves several meticulous steps, including forming insulating layers, depositing conductive layers, and etching channels to create precise control mechanisms within the semiconductor layer.

Career Highlights

Ying W Go's career reflects a robust commitment to advancing memory technology. He has had the opportunity to work with esteemed organizations, including Actel Corporation and Nanostar Corporation. His work at these companies has been instrumental in pushing the boundaries of technological innovation, particularly in memory storage solutions.

Collaborations

Throughout his career, Ying W Go has collaborated with notable colleagues such as John L McCollum and Abdelshafy A Eltoukhy. Their combined expertise has fostered a collaborative environment that promotes inventive ideas and the development of cutting-edge technologies in the semiconductor field.

Conclusion

Ying W Go stands out as a leading figure in memory cell innovation, with his patents paving the way for advancements in non-volatile memory technology. His dedication to research and development continues to inspire future generations of inventors, proving that innovation is the key to unlocking new possibilities in data storage.