The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 1998
Filed:
Sep. 30, 1996
Ying W Go, Palo Alto, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A programmable high speed routing switch is provided which has a lower ON-resistance so as to increase its gate oxide reliability. The routing switch includes a non-volatile memory cell (12) having a floating gate (FG). The floating gate is selectively charged and discharged to provide either a net positive potential or a net negative potential. The routing switch also includes a memory transistor (14), a pass gate transistor (16), and a poly load element (18). The source of the memory transistor is connected to a first power supply potential. The gate of the memory transistor is connected to the floating gate of the memory cell, and the drain thereof is connected to the gate of the pass gate transistor and to a first end of the poly load element. The drain of the pass gate transistor is connected to a first signal line (PG1) and the source of the pass gate transistor is connected to a second signal line (PG2). The second end of the poly load element is connected to a second power supply potential.