Taichung, Taiwan

Ying-Shan Kuo

USPTO Granted Patents = 6 


Average Co-Inventor Count = 3.8

ph-index = 1


Location History:

  • Taichung, TW (2021 - 2022)
  • Zhubei, TW (2022)

Company Filing History:


Years Active: 2021-2025

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6 patents (USPTO):Explore Patents

Title: Innovations of Ying-Shan Kuo in Memory Device Technology

Introduction

Ying-Shan Kuo is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory device technology, holding a total of 6 patents. His work focuses on enhancing the performance and reliability of memory devices through innovative testing and erasing methods.

Latest Patents

One of his latest patents is a "Test device and testing method for memory device." This invention provides a test device that includes a selection signal generator and multiple test pattern generators. The selection signal generator detects voltage variations on a test signal to generate a test mode selection signal. The test pattern generators are activated based on this signal to perform testing operations on various memory cell rows.

Another notable patent is the "Memory device and erasing method thereof." This method outlines a systematic approach to erasing memory devices. It involves determining whether a memory passes initial erasing verification operations and performing necessary erasing operations based on the results. The method also includes steps for over-erase correction, ensuring the integrity of the memory data.

Career Highlights

Ying-Shan Kuo is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory technology. His expertise has led to advancements that improve the efficiency and reliability of memory devices.

Collaborations

Throughout his career, Kuo has collaborated with notable colleagues, including Lung-Chi Cheng and Ju-Chieh Cheng. These partnerships have fostered a collaborative environment that enhances the development of cutting-edge technologies.

Conclusion

Ying-Shan Kuo's contributions to memory device technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence advancements in memory technology, ensuring better performance and reliability for future applications.

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