Singapore, Singapore

Ying Jin


Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 42(Granted Patents)


Company Filing History:


Years Active: 2000-2011

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3 patents (USPTO):Explore Patents

Title: Ying Jin: A Pioneer in Semiconductor Technologies

Introduction

Ying Jin is a notable inventor based in Singapore, recognized for his significant contributions to semiconductor technologies. With three patents to his name, he has pioneered innovative methods in semiconductor device fabrication, particularly focusing on dual-metal gate structures.

Latest Patents

Ying Jin's latest patents include groundbreaking work on "Semiconductor devices with dual-metal gate structures and fabrication methods thereof". This patent details a semiconductor substrate featuring a first doped region and a second doped region, which are separated by an insulation layer. He introduces a first metal gate stack on the first doped region and a second metal gate stack on the second doped region, ensuring enhanced performance and efficiency in semiconductor devices. The construction of these gate stacks involves intricate layers, including an interfacial layer, a high-k dielectric layer, and multiple metal layers, culminating in a robust design suitable for advanced applications.

Career Highlights

Ying Jin has garnered extensive experience in the semiconductor industry, having worked with prestigious organizations such as Taiwan Semiconductor Manufacturing Company and Chartered Semiconductor Manufacturing Ltd. His tenure at these companies has equipped him with a wealth of knowledge and expertise, enabling him to develop innovative solutions that address contemporary challenges in semiconductor technology.

Collaborations

Throughout his career, Ying Jin has collaborated with esteemed coworkers including Peng-Fu Hsu and Fong-Yu Yen. These partnerships have fostered a creative environment that has led to the development of novel technologies and enhancements in the field of semiconductor devices.

Conclusion

In conclusion, Ying Jin's innovative work in dual-metal gate structures has significantly advanced the semiconductor industry. His patents not only reflect his dedication to technological advancement but also pave the way for future developments in semiconductor devices. As he continues his work, the impact of his inventions is likely to resonate across the technology landscape for years to come.

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