Taiwan Semiconductor Manufacturing Comp. Ltd.

Chartered Semiconductor Manufacturing Ltd (Corporation)

Ying Jin

Hun-Jan Tao

Huan-Just Lin

Yi-Shien Mor

Peng-Fu Hsu

Fong-Yu Yen

Siow Lee Chwa

Yung-Tao Lin

Semiconductor devices with dual-metal gate structures and fabrication methods thereof. A semiconductor substrate with a first doped region and a second doped region separated by an insulation layer is provided. A first metal gate stack is formed on the first doped region, and a second metal gate stack is formed on the second doped region. A sealing layer is disposed on sidewalls of the first gate stack and the second gate stack. The first metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a first metal layer on the high-k dielectric layer, a metal insertion layer on the first metal layer, a second metal layer on the metal insertion layer, and a polysilicon layer on the second metal layer. The second metal gate stack comprises an interfacial layer, a high-k dielectric layer on the interfacial layer, a second metal layer on the high-k dielectric layer, and a polysilicon layer on the second metal layer.

Semiconductor devices with dual-metal gate structures and fabrication methods thereof

A new method is provided for the creation of an oxide layer that contains three different thicknesses. A first layer of oxide is grown on the surface of a substrate; a first layer of photoresist is deposited and patterned thereby partially exposing the surface of the underlying first layer of oxide. A nitrogen implant is performed into the surface of the underlying substrate; the photoresist mask of the first layer of photoresist is removed. A second layer of photoresist is deposited and patterned, the first layer of oxide is removed from above and surrounding the implanted regions of the substrate. The second mask of resist is removed. The first layer of oxide is reduced in thickness, its thickness is restored to a first thickness by a blanket growth of a second layer of oxide over the exposed surface of the substrate (where no ion implant has been performed) to a third thickness, over the surface of the substrate where the ion implant has been performed to a second thickness and over the surface of the first layer of oxide thereby restoring this layer of oxide to its original first thickness.

Creation of multiple gate oxide with high thickness ratio in flash

Growing community of inventors

Singapore, Singapore

Ying Jin