This inventor holds 3 USPTO granted patents. Top assignees: Micron Technology Incorporated, International Business Machines Corporation. Active years: 2017-2023.
Company Filing History:


Years Active: 2017-2023
Title: Innovations of Inventor Yin Lu
Introduction
Yin Lu is a notable inventor based in Shanghai, China. He has made significant contributions to the field of memory technology, holding a total of 3 patents. His work focuses on enhancing memory refresh operations, which are crucial for maintaining data integrity in electronic devices.
Latest Patents
Yin Lu's latest patents include innovative apparatuses and methods for refreshing memories with redundancy. These embodiments are designed to check redundancy information for row addresses before executing various refresh operations, such as auto refresh and targeted refresh operations. In some instances, refresh operations may involve multi pump refresh operations. Additionally, a targeted refresh operation may be conducted prior to an auto refresh operation in response to a multi pump refresh operation. The redundancy information for the auto refresh operation can be partially executed during the targeted refresh operation. Furthermore, refresh operations on word lines may be bypassed if the redundancy information indicates that the word line is defective or unused.
Career Highlights
Yin Lu has worked with prominent companies in the technology sector, including Micron Technology Incorporated and IBM. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.
Collaborations
Yin Lu has collaborated with several talented individuals in his field, including Bin Du and Liang Li. Their combined expertise has contributed to the advancement of memory technology and the successful development of new inventions.
Conclusion
Yin Lu's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry, paving the way for future innovations in memory refresh operations.