This inventor holds 1 USPTO granted patent. Top assignee: Intel Ndtm US LLC. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yi Zhang and Semiconductor Patent Innovation.
Introduction
Yi Zhang is an inventor associated with Dalian, China, and Intel Ndtm US LLC. His patent work concerns semiconductor structures for 3D-NAND memory technology.
Latest Patents
Zhang is associated with one patent, 1 patent: “Barrier and Thin Spacer for 3D-NAND Complementary Metal-Oxide Semiconductor Under Array.” The invention describes forming a titanium nitride (TiN) barrier next to gate polysilicon on a substrate, then forming a silicon nitride (SiN) spacer around the polysilicon gate and barrier. This structure is intended for complementary metal-oxide semiconductor under array (CuA) technology in 3D-NAND devices.
Career Highlights
The available information connects Zhang’s patent activity with Intel Ndtm US LLC and semiconductor manufacturing technology. His disclosed invention focuses on materials and structural features used in 3D-NAND fabrication.
Collaborations
Zhang’s listed coworkers include Hongxiang Mo and Tony Zengtao Liu. Their names are associated with the same professional context provided for Zhang.
Conclusion
Yi Zhang’s patent highlights a barrier-and-spacer approach to gate polysilicon structures for 3D-NAND CuA technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile