The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2026
Filed:
Aug. 04, 2022
Applicant:
Intel Ndtm Us Llc, Santa Clara, CA (US);
Inventors:
Assignee:
INTEL NDTM US LLC, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/35 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H10B 43/35 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/27 (2023.02);
Abstract
Systems, apparatuses, and methods may provide for technology for forming a gate polysilicon for 3D-NAND complementary metal-oxide semiconductor under array (CuA) on a substrate with a barrier and spacer structure. For example, the technology includes forming a titanium nitride (TiN) barrier adjacent the gate polysilicon and forming a silicon nitride (SiN) spacer around the polysilicon gate and the titanium nitride barrier.