This inventor holds 1 USPTO granted patent. Top assignee: Intel Ndtm US LLC. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Hongxiang Mo and 3D-NAND Semiconductor Technology.
Introduction
Hongxiang Mo is an inventor associated with Dalian, China, and Intel NDTM US LLC. His patent work concerns semiconductor structures for 3D-NAND memory technology.
Latest Patents
Mo is named on one patent, “Barrier and Thin Spacer for 3D-NAND Complementary Metal-Oxide Semiconductor Under Array.” The invention describes forming gate polysilicon for 3D-NAND complementary metal-oxide semiconductor under array (CuA) on a substrate. It includes a titanium nitride (TiN) barrier adjacent to the gate polysilicon and a silicon nitride (SiN) spacer surrounding the polysilicon gate and TiN barrier. This structure is intended to support the fabrication of CuA components.
Career Highlights
Mo’s listed patent reflects work in semiconductor fabrication, particularly materials and structures used in 3D-NAND memory. He is associated with Intel NDTM US LLC and has 1 patent listed in the provided information.
Collaborations
Mo’s listed coworkers include Yi Zhang and Tony Zengtao Liu, who are also associated with the patent information provided.
Conclusion
Hongxiang Mo’s patent focuses on a barrier-and-spacer structure for 3D-NAND CuA technology, highlighting his contribution to semiconductor device fabrication.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile