Yi-Hsiu Chen

Title: Innovations of Yi-Hsiu Chen in Non-Volatile Memory Technology

Introduction

Yi-Hsiu Chen is a prominent inventor based in Chu-Pei, Taiwan, known for his significant contributions to the field of non-volatile memory technology. With a total of three patents to his name, Chen has developed innovative methods and structures that enhance the performance and efficiency of memory cells.

Latest Patents

Chen's latest patents include a non-volatile memory having discrete isolation structures and SONOS memory cells. This invention introduces a method of operating and manufacturing non-volatile memory that utilizes discrete isolation structures on a semiconductor substrate. The design features gaps that allow for the implantation of source lines without being severed by the isolation structures, which significantly reduces the number of barrier pins required. This innovation leads to a more compact design and improved efficiency in non-volatile memory devices. Another notable patent involves a method of manufacturing a non-volatile memory cell using self-aligned metal silicide. This method replaces the conventional tungsten metal layer with self-aligned metal silicide to form a polysilicon gate, simplifying the manufacturing process and reducing costs while avoiding issues related to resistance shifts.

Career Highlights

Throughout his career, Yi-Hsiu Chen has worked with notable companies in the semiconductor industry, including Elite Semiconductor Memory Technology, Inc. and Eon Silicon Solution Inc. His experience in these organizations has allowed him to refine his expertise in memory