The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Oct. 20, 2008
Applicants:
Yi-hsiu Chen, Chu-Pei, TW;
Yung-chung Lee, Chu-Pei, TW;
Yider Wu, Chu-Pei, TW;
Inventors:
Assignee:
Eon Silicon Solution Inc., , TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01); H01L 21/00 (2006.01); H01L 21/8238 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a method of manufacturing a non-volatile memory cell, a self-aligned metal silicide is used in place of a conventional tungsten metal layer to form a polysilicon gate, and the self-aligned metal silicide is used as a connection layer on the polysilicon gate. By using the self-aligned metal silicide to form the polysilicon gate, the use of masks in the etching process may be saved to thereby enable simplified manufacturing process and accordingly, reduced manufacturing cost. Meanwhile, the problem of resistance shift caused by an oxidized tungsten metal layer can be avoided.