Company Filing History:
Years Active: 2011-2012
Title: Yung-Chung Lee: Innovator in Non-Volatile Memory Technology
Introduction
Yung-Chung Lee is a prominent inventor based in Chu-Pei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory cells. With a total of 2 patents to his name, Lee's work has paved the way for advancements in memory manufacturing processes.
Latest Patents
One of Lee's latest patents is a method of manufacturing a non-volatile memory cell using self-aligned metal silicide. This innovative approach replaces the conventional tungsten metal layer with self-aligned metal silicide to form a polysilicon gate. By utilizing this method, the manufacturing process is simplified, reducing costs and avoiding issues related to resistance shifts caused by oxidized tungsten layers.
Another notable patent is the method of manufacturing a double-implant NOR flash memory structure. This process involves phosphorus ion implantation to create a P-doped drain region in a semiconductor substrate. This design enhances the electric connection at the junction between the highly-doped drain and lightly-doped drain regions, addressing challenges such as short channel effects and punch-through issues.
Career Highlights
Yung-Chung Lee has worked with Eon Silicon Solutions, Inc., where he has contributed to various projects in semiconductor technology. His expertise in memory cell manufacturing has been instrumental in advancing the capabilities of non-volatile memory devices.
Collaborations
Lee has collaborated with notable colleagues such as Yi-Hsiu Chen and Yider Wu, further enhancing the innovation landscape in the semiconductor industry.
Conclusion
Yung-Chung Lee's contributions to non-volatile memory technology through his patents and career achievements highlight his role as a key innovator in the field. His work continues to influence advancements in semiconductor manufacturing processes.