This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Yi-Hsin Ting: Innovator in Semiconductor Manufacturing
Introduction
Yi-Hsin Ting is a notable inventor based in Pingtung, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, showcasing his expertise through his innovative patents. His work is essential in advancing technology and improving semiconductor devices.
Latest Patents
Yi-Hsin Ting holds a patent for a "Method of manufacturing semiconductor devices and semiconductor devices." This patent outlines a process where a fin structure is formed by patterning a semiconductor layer. An isolation insulating layer is created such that an upper portion of the fin structure protrudes from it. A gate dielectric layer is formed through a deposition process, followed by a nitridation operation on the gate dielectric layer. Finally, a gate electrode layer is established over the gate dielectric layer. The gate dielectric layer includes silicon oxide, and the nitridation operation involves a plasma nitridation process using Ngas and NHgas.
Career Highlights
Yi-Hsin Ting is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor industry. His role in this company has allowed him to contribute to groundbreaking advancements in semiconductor technology. His patent reflects his commitment to innovation and excellence in his field.
Collaborations
Some of his coworkers include Hao-Ming Tang and Shu-Han Chen, who collaborate with him on various projects within the semiconductor domain.
Conclusion
Yi-Hsin Ting is a prominent figure in semiconductor manufacturing, with a patent that highlights his innovative approach to technology. His contributions are vital for the ongoing development of semiconductor devices.