The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 23, 2025
Filed:
Jun. 10, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hao-Ming Tang, Taipei, TW;
Shu-Han Chen, Hsinchu, TW;
Yun-San Chien, Hsinchu, TW;
Da-Yuan Lee, Jhubei, TW;
Chi On Chui, Hsinchu, TW;
Tsung-Ju Chen, Hsinchu, TW;
Yi-Hsin Ting, Pingtung County, TW;
Han-Shen Wang, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, an isolation insulating layer is formed such that an upper portion of the fin structure protrudes from the isolation insulating layer, a gate dielectric layer is formed by a deposition process, a nitridation operation is performed on the gate dielectric layer, and a gate electrode layer is formed over the gate dielectric layer. The gate dielectric layer as formed includes silicon oxide, and the nitridation operation comprises a plasma nitridation operation using a Ngas and a NHgas.