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For the Inventor, By the Inventor

Hsinchu, Taiwan

Yi-Hsin Nien

This inventor holds 23 USPTO granted patents and 23 published patent applications, primarily in Memory Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yi-Hsin Nien. Retrieved from https://idiyas.com/inventor/yi-hsin-nien

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 23 

% Patents Active = 91.3

Average Co-Inventor Count = 3.9

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:

goldMedal23 out of 42,965 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2021-2026

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Areas of Expertise:
SRAM Memory Cell
Bit Line Loading
Negative Voltage Circuit
Memory Device
Word Line
Bitcell Functionality
Memory Operation
Four CPP Wide Memory Cell
Latch Circuits
Address Signal Adjustment
Negative Bit Line
Manufacturing Method
23 patents (USPTO):Explore Patents
1. 12727142 - Method for forming a SRAM memory cell structure (2026-09-01),
2. 12700454 - Fly shared bit line on 4-CPP static random access memory (SRAM) cell and array (2026-08-04),
3. 12586628 - Adjusting pulse width based on address signal in memory devices (2026-03-24),
4. 12531549 - Latch circuits and methods for operating the same (2026-01-20),
5. 12387768 - Memory device including separate negative bit line (2025-08-12),
6. 12369292 - Memory device (2025-07-22),
7. 12367929 - Memory device having a negative voltage circuit (2025-07-22),
8. 12334145 - Bitcell supporting bit-write-mask function (2025-06-17),
9. 12260903 - Memory devices with improved bit line loading (2025-03-25),
10. 12230318 - Memory device including a word line with portions with different sizes in different metal layers (2025-02-18),
11. 12159688 - Systems and methods for memory operation using local word lines (2024-12-03),
12. 12137548 - Four CPP wide memory cell with buried power grid, and method of fabricating same (2024-11-05),
13. 12125523 - Memory device and method of manufacturing the same (2024-10-22),
14. 11929116 - Memory device having a negative voltage circuit (2024-03-12),
15. 11910587 - Memory circuit having SRAM memory cells and method for forming a SRAM memory cell structure (2024-02-20),

Title: Innovator Yi-Hsin Nien: Advancements in SRAM Technology

Introduction

Yi-Hsin Nien is a distinguished inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, with 16 patents to his name. His innovative work has focused on improving memory devices, particularly through SRAM (Static Random Access Memory) advancements.

Latest Patents

Among Yi-Hsin Nien's latest patents is the invention of a "Bitcell Supporting Bit-Write-Mask Function." This SRAM design includes multiple memory cells, each equipped with a data storage unit, a data I/O control, and multiple access controls. These access controls enable the input and output of data only when certain conditions regarding the access control lines are met. This innovative design ensures data integrity during write operations.

Another notable invention by Nien is related to "Memory Devices with Improved Bit Line Loading." This patent describes a memory array comprising multiple memory cells arranged over a substrate, each connected to corresponding word lines and bit line pairs. The configuration allows for more efficient data access and increased performance in memory operations.

Career Highlights

Yi-Hsin Nien currently works at Taiwan Semiconductor Manufacturing Company Ltd. His role at the company has allowed him to push the boundaries of semiconductor technology. Throughout his career, he has been recognized for his inventive capabilities and contribution to memory device performance enhancements.

Collaborations

Nien has collaborated with several talented individuals in the field, including Hidehiro Fujiwara and Yen-Huei Chen. These partnerships have fostered a collaborative environment that continues to inspire innovative solutions in semiconductor technology.

Conclusion

Yi-Hsin Nien stands out as a key figure in the semiconductor industry, with his 16 patents showcasing his innovative spirit. His latest inventions in SRAM technology are set to enhance the performance of memory devices, making significant strides in the functionality and reliability of modern electronics. As technology continues to evolve, Nien's contributions will undoubtedly leave a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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