Yi Hong Wang

Title: Yi Hong Wang and FinFET Device Innovation.

Introduction

Yi Hong Wang is an inventor associated with Taichung, Taiwan. His work includes a semiconductor device design intended to improve FinFET structures. The available information identifies 1 patent associated with him.

Latest Patents

Wang’s patent, “FinFET Device Structure with Extra Fin,” describes a semiconductor device with active fin structures and a source/drain region in contact with them. A shallow trench isolation feature separates these active fins from a second set of fins. The design places a contact etch stop layer over the source/drain region and the second set of fins, with a gate extending over both sets. The second set includes one or more non-active fins that contact the contact etch stop layer but do not contact the source/drain region.

Career Highlights

Wang is associated with Taiwan Semiconductor Manufacturing Company Limited. His patent focuses on FinFET device architecture, including the placement of non-active fins alongside active structures.

Collaborations

Hui-Hsuan Kung is identified as Wang’s coworker. The provided information does not specify their particular projects or contributions together.

Conclusion

Yi Hong Wang’s patent documents a FinFET structure that incorporates extra non-active fins alongside active fins, reflecting his contribution to semiconductor device design.