The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2026
Filed:
Aug. 24, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Yi Hong Wang, Taichung, TW;
Hui-Hsuan Kung, Taichung, TW;
Yi-Lii Huang, Hsinchu, TW;
Chih-Hsiao Chen, Taichung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Embodiments of the present disclosure provide a FinFET semiconductor including a first set of fin structures that are active, a source/drain (S/D) region in contact with the first set of fin structures, a second set of fin structures separated, via a shallow trench isolation (STI) feature, from the first set of fin structures, a contact etch stop layer (CESL) over the S/D region and over the second set of fin structures, and a gate over the first set of fin structures and over the second set of fin structures, the gate including a gate dielectric and a gate electrode over the gate dielectric. The second set of fin structures includes one or more non-active fin structures that are in contact with the CESL without being in contact with the S/D region.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile