Saratoga, CA, United States of America

Yi-Hen Wei


Average Co-Inventor Count = 1.4

ph-index = 6

Forward Citations = 123(Granted Patents)


Location History:

  • Santa Clara, CA (US) (1995)
  • Saratoga, CA (US) (1993 - 1997)

Company Filing History:


Years Active: 1993-1997

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7 patents (USPTO):Explore Patents

Title: Innovations by Yi-Hen Wei

Introduction

Yi-Hen Wei is a notable inventor based in Saratoga, CA (US). He has made significant contributions to the field of semiconductor technology, holding a total of 7 patents. His work focuses on enhancing the performance and reliability of integrated circuits and bipolar transistors.

Latest Patents

One of his latest patents is titled "Hot-carrier shield formation for bipolar transistor." This invention provides a bipolar transistor in which a lightly doped n-type hot-carrier shield extends in an epitaxial layer adjacent from a poly-emitter to an extrinsic base. This hot-carrier shield minimizes performance impairment that would otherwise occur due to a hot-carrier effect. Key steps in the method of making the bipolar transistor include a differential thermal oxidation while the poly-emitter is covered with a nitride cap. After the nitride cap is removed, an n-type dopant is implanted. The unprotected poly emitter is heavily doped. The implant partially penetrates a relatively thin oxide growth, thereby forming the hot-carrier shield. Other areas, such as the extrinsic base and a polycrystalline base extension, are covered by a relatively thick oxide growth and are unaffected by the n-type implant.

Another significant patent is the "ESD and hot carrier resistant integrated circuit structure." This integrated circuit device includes a substrate, a gate structure formed over the substrate, and a channel formed in the substrate under the gate. It features a lightly-doped drain-side LDD region formed in the substrate adjacent to a drain-side of the channel, along with a drain region formed near the drain-side LDD region. The method of the present invention includes several steps, such as providing a semiconductor substrate, forming a gate over the substrate to define a channel, and doping the substrate to form various regions that enhance the device's performance.

Career Highlights

Yi-Hen Wei is currently associated with VLSI Technology, Inc., where he continues to innovate in the semiconductor field. His work has been instrumental in advancing technologies that improve the efficiency and reliability of electronic devices.

Collaborations

He has collaborated with notable coworkers, including Ying T Loh and Chung S Wang, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Yi-Hen Wei's contributions to the field of semiconductor technology through his innovative patents and collaborations

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